| abstract |
An infrared emitter (10), which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer (12), a dielectric material layer (14) overlaying the semiconductor material layer, and a metallic material layer (16) having an inner side overlaying the dielectric material layer. The semiconductor material layer (12) is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features (18) are defined in the device in a periodic or quasi-periodic manner. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects. The emitter device may also function as a selective detector of electromagnetic radiation. |