http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007034831-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e33745b6e8cf523565a1c3501b864e04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a93220e55eba87e7c71d32ed0ff62b62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c0e65e8277bcc7f678ad7f4192334c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1476752f2420c8f8eb53464cf7fc922b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-02 |
| filingDate | 2006-09-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc945af84c5cd5e3a77bec449198d9fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6767937c4a025887923d1f46b9cc5c66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59810d9f81ec2529395107847255108f |
| publicationDate | 2007-03-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2007034831-A1 |
| titleOfInvention | Stacked positive coefficient thermistor |
| abstract | This invention provides a stacked positive coefficient thermistor comprising a semiconductor ceramic layer composed mainly of a BaTiO3-based ceramic material. The ratio between Ba site and Ti site is 0.998 to 1.006. At least one element selected from La, Ce, Pr, Nd and Pm is contained as a semiconducting agent. This stacked positive coefficient thermistor satisfies d ≥ 0.6 μm and d/D < 0.2 wherein d represents the thickness of an internal electrode layer and D represents the thickness of the semiconductor ceramic layer. The above constitution can realize a stacked positive coefficient thermistor having a small percentage change in room-temperature resistance value with the elapse of time without the necessity of using any troublesome method such as heat treatment even in the case of a semiconductor ceramic layer in which the sintered density is low, that is, the measured sintered density is 65% to 90% of the theoretical sintered density. When the content of the semiconducting agent is 0.1 to 0.5 part by mole based on 100 parts by mole of Ti, low-temperature baking at 1150ºC is possible and low room-temperature resistance value and satisfactorily large percentage change in resistance can be realized. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7830240-B2 |
| priorityDate | 2005-09-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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