| abstract |
A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a p of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/°C (typically less than ±300 ppm/°C). A sheet resistance of at least 20 kΩ/O may also be obtained. The resulting thin film is preferably at least 200 A (20nm) thick, to reduce surface scattering conduction currents. |