| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_535e95972efb122b574bc3ac8b7cebf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad985c4fac93da9a82c541e6605339b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ede3c505f324224e28753c54bd0e72c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate |
2009-11-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b504e5428f04261efc067596f0a6e39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_643e178f013659bc7dfe1ce430a8f412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_849f4a71186b2ab05e9fbdbbd866dd4c |
| publicationDate |
2010-06-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010061619-A1 |
| titleOfInvention |
Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus |
| abstract |
Disclosed is a method wherein a semiconductor substrate is produced by heat-treating a base substrate that comprises a portion to be heat-treated, said portion being subjected to a heat treatment. The method for producing a semiconductor substrate comprises: a step wherein a portion to be heated is formed on the base substrate, said portion to be heated absorbing electromagnetic waves and generating heat, thereby selectively heating the portion to be heat-treated; a step wherein the base substrate is irradiated with electromagnetic waves; and a step wherein the lattice defect density in the portion to be heat-treated is decreased by the heat that is generated when the portion to be heated absorbs electromagnetic waves. |
| priorityDate |
2008-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |