| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ba3a51963df8a23cd980c38f56cc2462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81d545e3a7294a9cb3543942c973da5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81a5d1f0d5dfdf51d2495345dd56dccc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a398c47c055b880d4c7c5f6befe3f6b4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2010-04-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df330c931433ed4df8af28da1f969e19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_216b07a38bc13de2852aed4ccf72ae57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a93c08f9b717392a5acab0bee3e428b2 |
| publicationDate |
2010-11-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010126237-A2 |
| titleOfInvention |
Ultra-fine-grained polysilicon thin film vapour-deposition method |
| abstract |
According to the present invention, an ultra-fine-grained polysilicon thin film vapour-deposition method comprises the steps of: forming a nitrogen atmosphere on the inside of a chamber in which a substrate has been loaded; and vapour-depositing a polysilicon thin film on the substrate by supplying a source gas into the chamber; the source gas comprising a silicon-based gas, a nitrogen-based gas and a phosphorous-based gas. The step of forming the nitrogen atmosphere may include the step of supplying the nitrogen-based gas into the chamber. |
| priorityDate |
2009-04-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |