| abstract |
A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111 ) or hcp(001 ) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni) x , (Co/NiFe) x , (Co/NiCo) x , (CoFe/NiFe) x , or (CoFe/NiCo) x composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220°C to 400°C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator. |