abstract |
A source (S) is formed by a source metal (25s) disposed on the top layer of a gate insulating film (23) and an oxide semiconductor film (24a), and a drain (DR) is formed by a low-resistance region (24ad) of the oxide semiconductor film (24a), in which part of the oxide semiconductor film (24a), including the surface that is on the opposite side of the gate insulating film (23), has low resistance. |