http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012045685-A1

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filingDate 2011-09-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ee5d186c89bc8dba535efab03c461b3
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publicationDate 2012-04-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2012045685-A1
titleOfInvention Edge-emitting semiconductor laser
abstract The invention relates to an edge-emitting semiconductor laser comprising - a semiconductor body (1) which comprises at least two stripe emitters (10) that are arranged adjacent to each other in the transverse direction (101), each stripe emitter (10) comprising at least one active zone (2) that is equipped to generate electromagnetic radiation; - at least two facets (11) on the active zones (2), said facets forming at least one resonator (33) for at least one of the stripe emitters (10); and - at least two contact surfaces (3) which are mutually spaced in the transverse direction (101) and which are applied on an outer surface (12) of the semiconductor body (1), wherein - each stripe emitter (10) is uniquely associated with one contact surface (3), - current is impressed into at least one of the stripe emitters (10) via the contact surfaces (3) during the operation of the semiconductor laser (100), and - at least two of the stripe emitters (10) can be electrically operated separately from each other.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019039291-A1
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priorityDate 2010-10-04^^<http://www.w3.org/2001/XMLSchema#date>
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