| abstract |
Provided are a process for growing silicon carbide single crystal by a physical vapor transport method and a process for annealing silicon carbide single crystal in situ after growing. Specifically, a position of an upper insulation layer in a growth chamber is adjusted to achieve the real-time and dynamic adjustment of a temperature field distribution of the growth chamber, so that the temperature field distribution in the growth chamber is adjusted as desired by the process in real time in the whole crystal growth process. As the temperature field distribution in the growth chamber is controllable in real time, the quality and yield of the crystal can be significantly improved. After the silicon carbide single crystal is grown, the pressure of an inert gas in the growth chamber is raised, and at the same time, the temperature gradient in the growth chamber is decreased, so that silicon carbide crystal is annealed in situ at a low temperature gradient, which is beneficial to the decrease of the stress between the crystal and a crucible cover and the stress in the silicon carbide crystal, thereby decreasing the breakage rate in subsequent processing processes, and improving the yield of the silicon carbide crystal after subsequent processing. |