http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013001056-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6960d55bbf347ecbcb71cac0b8ce6c6c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E30-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-42 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21C17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21C17-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B06B1-0644 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B06B1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-877 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21C17-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B06B1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22 |
| filingDate | 2012-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43990c2b71705711f9f69614107fc340 |
| publicationDate | 2013-01-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013001056-A1 |
| titleOfInvention | Method for manufacturing a high-temperature ultrasonic transducer using a lithium niobate crystal brazed with gold and indium |
| abstract | The invention relates to a method for manufacturing a high-temperature ultrasonic transceiver, said transceiver including a steel or metal upper electrode (2), a converter (3) made of a piezoelectric material, and a steel or metal substrate (1), which provides the interface between the converter and the propagation medium for acoustic waves, a first junction (J 1 ) between the substrate and the piezoelectric crystal, and a second junction (J 2 ) between the converter and the upper electrode, characterized in that said method includes, for producing said gold or indium junctions, a brazing and diffusion operation comprising the following steps: a first step of increasing the temperature to a first temperature between approximately 150°C and approximately 400°C, and maintaining said first temperature for a first period of time corresponding to a first plateau; and a second step of increasing the temperature to a second temperature between approximately 400°C and approximately 1000°C, and maintaining said second temperature for a second period of time corresponding to a second plateau. |
| priorityDate | 2011-06-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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