| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b68e994b7a66abd9458eedfeae868553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b5e6d4dcb0929cf64bc6d80de2d8f6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_663e83cebe5fbb39cd6f12019ddf77a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6804be829bb8b45c7eb140070c1b0e8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-06-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43a2ae6ff6e11ef9c30192b2cadb9e66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_179f0cb8c53f00f1447bf72cbf7f824a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6708186bf32b90a3f7b246bca105de76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0db2695f110f3708420a5a6c22f5f20 |
| publicationDate |
2013-03-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013039580-A1 |
| titleOfInvention |
Integrated circuit structure having selective formed metal cap |
| abstract |
Methods of forming an integrated circuit structure utilizing a selectively formed and at least partially oxidized metal cap over a gate, and associated structures. In one embodiment, a method includes providing a precursor structure including a transistor having a metal gate; forming an etch stop layer over an exposed portion of the metal gate; at least partially oxidizing the etch stop layer; and forming a dielectric layer over the at least partially oxidized etch stop layer. |
| priorityDate |
2011-09-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |