http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013064978-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0235
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00476
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0006
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00
filingDate 2012-10-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_426df9b79cf2798abd3ab33be6eeb60a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e47081739918789cf29321c894938b6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28c5e48ae69bb1009ce51a93082a659a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25a21b1990a0b1c9fc3fe82fff2b6dae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c092d68282c782ada81686a5d61f95d
publicationDate 2013-05-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2013064978-A1
titleOfInvention Micro -electro -mechanical device with buried conductive regions, and manufacturing process thereof
abstract A MEMS device (17) formed by a body (2); a cavity (25), extending above the body; mobile and fixed structures (18, 19) extending above the cavity and physically connected to the body via anchoring regions (16); and electrical-connection regions (10a, 10b, 10c), extending between the body (2) and the anchoring regions (16) and electrically connected to the mobile and fixed structures. The electrical-connection regions (10a, 10b, 10c) are formed by a conductive multilayer including a first semiconductor material layer (5), a composite layer (6) of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer (7).
priorityDate 2011-10-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2011762-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1914195-A2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID61330
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520437
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID139582
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415842095
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16212546
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518429

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