| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b751dff17f840c46724342ea32ed4f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate |
2012-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_615222c1ebf3163a4d49dd7999a71bce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_832083c0831de5399a1f749b41a82864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23cbf9d135c6ce10c281d9ff037685b0 |
| publicationDate |
2013-07-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013105349-A1 |
| titleOfInvention |
Method for manufacturing silicon carbide semiconductor device |
| abstract |
In this method for manufacturing a silicon carbide semiconductor device, thermal etching is performed with respect to a silicon carbide layer by supplying a process gas to the silicon carbide layer, while heating the silicon carbide layer, said process gas being chemically reactive to silicon carbide. A carbon film (50) is formed on the silicon carbide layer by the thermal etching. The silicon carbide layer is heat treated such that carbon is diffused from the carbon film (50) into the silicon carbide layer. |
| priorityDate |
2012-01-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |