| abstract |
A silicon carbide semiconductor device (100) comprises an insulator film (126), and a silicon carbide layer (109) further comprising a surface which is covered with the insulator film (126). The surface includes a first region (R1). The first region (R1) has at least partially a first plane direction. The first plane direction is any of a (0-33-8) plane, a (30-3-8) plane, a (-330-8) plane, a (03-3-8) plane, a (-303-8) plane, or a (3-30-8) plane. |