| abstract |
A silicon-carbide semiconductor device having lattice-shaped trenches (2) formed on the surface of a silicon-carbide substrate on which a semiconductor layer is formed, and a gate electrode (1) formed in the interior of the trenches (2) interposed by a gate insulating layer (8), wherein the silicon-carbide semiconductor device is characterized in that the trenches (2) are less deep in the portions formed where the trenches (2) intersect than the portion formed where the trenches (2) are parallel to each other. What is thereby obtained is a silicon-carbide semiconductor device in which the pressure resistance between the gate electrode and the drain electrode on the rear surface thereof is increased to prevent insulation breakdown, while at the same time the surface area of the gate electrode is increased, the channel density per unit of surface area is increased, and on resistance is low. |