http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015099988-A1

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filingDate 2014-12-08^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dc7baf09b8832629e21c1b11ccb7c3f
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publicationDate 2015-07-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2015099988-A1
titleOfInvention In situ control of ion angular distribution in a processing apparatus
abstract A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.
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priorityDate 2013-12-23^^<http://www.w3.org/2001/XMLSchema#date>
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