http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015105460-A3

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filingDate 2015-01-13^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-11-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2015105460-A3
titleOfInvention Method for forming low emissivity doped zinc oxide films on a substrate
abstract The invention relates to a method for forming low emissivity doped zinc oxide films on a substrate, and in particular, to a method for forming low emissivity gallium doped zinc oxide films on a substrate via a low temperature chemical bath deposition technique.
priorityDate 2014-01-13^^<http://www.w3.org/2001/XMLSchema#date>
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