| abstract |
A semiconductor device (200A) comprising: a thin-film transistor (201) including a gate electrode (3), an oxide semiconductor layer (5), a gate insulation layer (4), a source electrode (7A), and a drain electrode (7D); an inter-layer insulating layer (11) arranged so as to cover the thin-film transistor (201) and come in contact with a channel area (5c) in the thin-film transistor (201); and a transparent conductive layer (19) arranged upon the inter-layer insulating layer (11). The source and drain electrodes (7) each include copper. A copper alloy oxide film (10) that includes copper and at least one metal element other than copper is arranged between the source and drain electrodes (7) and the inter-layer insulating layer (11). The inter-layer insulating layer (11) covers the drain electrode (7D), having the copper alloy oxide film (10) interposed therebetween. The transparent conductive layer (19) is in direct contact with the drain electrode (7D) inside a contact hole (CH1) formed in the inter-layer insulating layer (11), without having the copper alloy oxide film (10) interposed therebetween. |