http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016185644-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B07C5-342 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2016-03-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_651d23ed29940e1fbfa79d037146eac3 |
| publicationDate | 2016-11-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2016185644-A1 |
| titleOfInvention | Method for manufacturing silicon epitaxial wafer and method for evaluating same |
| abstract | The present invention provides a method for manufacturing a silicon epitaxial wafer in which an epitaxial layer is grown on a silicon mirror-surface wafer, wherein the method for manufacturing a silicon epitaxial wafer is characterized in having: a step for measuring the photoluminescence (PL) spectrum of the mirror-surface wafer using a PL measurement device and adjusting the PL measurement device so that the TO beam emission intensity is equal to 30,000 to 50,000 counts; a step for irradiating the silicon epitaxial wafer with an electron beam; a step for measuring the PL spectrum from the electron beam irradiation region using the adjusted PL measurement device; and a step for selecting, and deeming as acceptable, a silicon epitaxial wafer in which the C i C s defect-derived emission intensity of the PL spectrum represents 0.5% or less of the TO beam emission intensity. Thereby provided is a method for manufacturing a silicon epitaxial wafer that, when an imaging element is manufactured using the silicon epitaxial wafer, it is possible to select a silicon epitaxial wafer in which white blemishes are not at a problematic level. |
| priorityDate | 2015-05-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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