http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016203834-A1

Outgoing Links

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filingDate 2016-04-19^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57d69c998ba644a25a483999a8d015ba
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publicationDate 2016-12-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2016203834-A1
titleOfInvention Pattern-forming method and electronic device production method
abstract Provided are: a pattern-forming method whereby a pattern having excellent CDU can be formed; and an electronic device production method. The pattern-forming method comprises: a film-formation step in which a film is formed upon an undercoat layer of a support body having the undercoat layer and a substrate, said film being formed by using an actinic ray-sensitive or a radiation-sensitive resin composition; an exposure step in which the film is exposed; a developing step in which the film is developed after the exposure step, a resist pattern is formed, and at least part of the undercoat layer is exposed; and an etching step in which the exposed undercoat layer is etched using a plasma generated from a processing gas including deposition gas and a deposit is caused to accumulate on the side surface of the resist pattern. The composition contains a resin having a weight-average molecular weight of at least 5,000 and having an acid-decomposable group. In the developing step, either an alkaline developing step or an organic agent developing step is implemented, followed by the other of these two steps.
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priorityDate 2015-06-19^^<http://www.w3.org/2001/XMLSchema#date>
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014178391-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010033720-A1
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