http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017016008-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d37147a1eebc1b4c794a203b6f0da7e5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2015-08-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6c6670a42535951b59dd425284ae5fa |
| publicationDate | 2017-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2017016008-A1 |
| titleOfInvention | Method for growing graphene on surface of grid electrode and method for growing graphene on surfaces of source and drain electrodes |
| abstract | Provided are a method for growing graphene on a surface of a grid electrode and a method for growing graphene on surfaces of source and drain electrodes. A low-temperature plasma enhanced vapor deposition manufacturing procedure is used to generate, on a grid electrode or source and drain electrodes containing copper, a graphene thin film having a controllable film thickness and being overlapped with a pattern of the grid electrode or the source and drain electrodes, wherein the preparation temperature of the graphene is relatively low, so that the structure of a thin film transistor can be minimally damaged, an adopted carbon source has a wide range of sources and is low cost, the manufacturing method is simple, and existing PECVD equipment in a thin film transistor production line can be used without increasing the cost. The grid electrode or the source and drain electrodes covered with the graphene are prevented from coming into contact with water and oxygen due to the protective effect of the graphene, solving the problem that the grid electrode or the source and drain electrodes containing the metal copper is very easily oxidized in a traditional TFT manufacturing procedure. In addition, the grapheme, with a high electrical conductivity, also does not affect the electrical performance of the whole device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110676169-A |
| priorityDate | 2015-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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