| abstract |
Provided is a semiconductor device having an oxide semiconductor film and a transistor with excellent electrical characteristics. The device is a semiconductor device provided with a transistor. The transistor comprises a gate electrode, a first insulation film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulation film. The source electrode and the drain electrode each comprise a first conductive film, a second conductive film on the first conductive film, and a third conductive film on the second conductive film. The second conductive film comprises copper, the first conductive film and the third conductive film comprise a material that suppresses the diffusion of copper, and the edges of the second conductive film have regions that include copper and silicon. |