| abstract |
All of the intervals between adjacent p-type guard rings (21) are made to be equal to or smaller than the interval between p-type deep layers (5). As a result, the intervals between the p-type guard rings (21) become larger, i.e. trenches (21a) become less dense, and thus a p-type layer (50) can be inhibited from being formed thick in a guard ring section when grown epitaxially. Accordingly, if the p-type layer (50) in a cell section is to be removed during etching back, the p-type layer (50) can be removed without leaving residue in the guard ring section. Therefore, when the p-type layer (50) is etched back and the p-type deep layers (5), the p-type guard rings (21), and p-type connecting layers (30) are formed, residue of the p-type layer (50) can be inhibited from being left in the guard ring section. |