| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c6a9fd6219b32cd3893a49979951bf4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate |
2017-12-15^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f95e60d855654c268ad3f1809b1c32c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae06ebfe6035472a93109d039adf3811 |
| publicationDate |
2018-06-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018116995-A1 |
| titleOfInvention |
Semiconductor light-emitting element and method for manufacturing same |
| abstract |
The purpose of the present invention is to provide a junction semiconductor light-emitting element including an InP cladding layer, the junction semiconductor light-emitting element having a light emission spectrum in which multiple peaks are mitigated. The semiconductor light-emitting element according to the present invention comprises a first conductivity-type InP cladding layer, a semiconductor light-emitting layer, and a second conductivity-type InP cladding layer which are successively disposed on an electrically conductive support substrate, the second conductivity-type InP cladding layer being on the light extraction side. The semiconductor light-emitting element further comprises a metal reflective layer which is disposed between the electrically conductive support substrate and the first conductivity-type InP cladding layer, and which reflects light emitted from the semiconductor light-emitting layer. In a surface of the second conductivity-type InP cladding layer, a plurality of recesses are provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3905344-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021112170-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020196739-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7201574-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020167372-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023037629-A1 |
| priorityDate |
2016-12-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |