http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019199603-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9694e0c07158e18b9acc95a0f6b952f8 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B45-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B45-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 |
| filingDate | 2019-04-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6ceaa099ebb1cdca5b942b964d5594e |
| publicationDate | 2019-10-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2019199603-A1 |
| titleOfInvention | Led and vertical mos transistor formed on same substrate |
| abstract | An LED module is disclosed containing an integrated MOSFET driver transistor in series with an LED. In one embodiment, GaN-based LED layers are epitaxially grown over an interface layer on a silicon substrate. The MOSFET gate is formed in a trench in the silicon substrate and creates a vertical channel between a top source and a bottom drain when the gate is biased to turn on the LED. A conductor on the die connects the MOSFET in series with the LED. One power electrode is located on a top of the die, another power electrode is located on the bottom of the die, and the gate electrode may be on the top or the side of the die. |
| priorityDate | 2018-04-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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