http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020158571-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_672353c0d98d612ecd91ef89b75f2e83 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 |
filingDate | 2020-01-23^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfaf53b858045956567cb156639a5be8 |
publicationDate | 2020-08-06^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-2020158571-A1 |
titleOfInvention | Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate |
abstract | A nitride semiconductor substrate that is constituted by monocrystals of a group III nitride semiconductor and has a main surface in which the nearest low-index crystal plane is the (0001) plane, the substrate having an oblique interface growth region grown on an oblique interface outside the (0001) plane, wherein: the areal proportion, of the main surface, occupied by the oblique interface growth region is 80% or more; there is no region of the main surface where the dislocation density exceeds 3 × 10 6 cm –2 when the dislocation density is measured on the basis of dark spot density via observation of the main surface at a 250 μm angle of view using a multiphoton excitation microscope; and the main surface has non-overlapping 50 μm-angle dislocation-free regions at a density of 100/cm 2 or greater. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021075369-A1 |
priorityDate | 2019-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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