http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020158571-A1

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filingDate 2020-01-23^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-08-06^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020158571-A1
titleOfInvention Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate
abstract A nitride semiconductor substrate that is constituted by monocrystals of a group III nitride semiconductor and has a main surface in which the nearest low-index crystal plane is the (0001) plane, the substrate having an oblique interface growth region grown on an oblique interface outside the (0001) plane, wherein: the areal proportion, of the main surface, occupied by the oblique interface growth region is 80% or more; there is no region of the main surface where the dislocation density exceeds 3 × 10 6 cm –2 when the dislocation density is measured on the basis of dark spot density via observation of the main surface at a 250 μm angle of view using a multiphoton excitation microscope; and the main surface has non-overlapping 50 μm-angle dislocation-free regions at a density of 100/cm 2 or greater.
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