http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020182406-A1

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filingDate 2020-02-13^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a728299aca26c35d323f954a81fc425d
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publicationDate 2020-09-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020182406-A1
titleOfInvention Semiconductor laser diode and method for producing a semiconductor laser diode
abstract The invention relates to a semiconductor laser diode (100), which comprises a semiconductor layer sequence (2) growing in a vertical direction and having an active layer (3) that is designed and provided in operation to generate light (8) in at least one active region (5) extending in a longitudinal direction (93), and which comprises a transparent electrically conductive cover layer (4) on the semiconductor layer sequence, wherein the semiconductor layer sequence is completed in a vertical direction (92) with an upper face (20), and the upper face has a contact region (21) arranged vertically above the active region and at least one cover region (22) immediately adjacent to the contact region in a lateral direction (91) perpendicular to the vertical and longitudinal direction, the cover layer being continuously applied on the upper face on the contact region and the at least one cover region, the cover layer being applied at least in at least one cover region directly to the upper face of the semiconductor layer sequence, and at least one element (10) defining an active region which is covered by the cover layer being present. The invention further relates to a method for producing a semiconductor laser diode.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022079033-A1
priorityDate 2019-03-14^^<http://www.w3.org/2001/XMLSchema#date>
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