| abstract |
Provided is a thin film-forming feedstock, for use in atomic layer deposition, that contains a ruthenium compound represented by general formula (1) below. (In formula (1), R1, R2, R3, R4, R5, and R6 each independently represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, or a fluorine atom-containing alkyl group having 1-4 carbon atoms, wherein each of the plurality constituted of R1, R2, R3, R4, R5, and R6 may be the same or different.) |