http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022263378-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a8ace3886ad985680695e66f92b53552 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-047 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-74 |
| filingDate | 2022-06-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18fa87b453debf0b9f41a9b3e2b070ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0291e2bd1102c07b7a47a9bd09773185 |
| publicationDate | 2022-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2022263378-A1 |
| titleOfInvention | Method, apparatus and computer program for processing a surface of an object |
| abstract | Described are a method for processing a surface of an object, in particular of a lithographic mask, an apparatus for carrying out such a method and a computer program containing instructions for carrying out such a method. A method for processing a surface of an object, in particular of a lithographic mask, includes the following steps: (a.) supplying a gas mixture containing at least a first gas and a second gas to a reaction site at the surface of the object; (b.) inducing a reaction, which includes at least a first partial reaction and a second partial reaction, at the reaction site by exposing the reaction site to a beam of energetic particles in a plurality of exposure intervals, wherein the first partial reaction is promoted primarily by the first gas and the second partial reaction is promoted primarily by the second gas, and wherein a gas refresh interval lies between the respective exposure intervals; (c.) setting a first time duration for the gas refresh interval, as a result of which the process rate of the first partial reaction and the process rate of the second partial reaction are present; (d.) setting a second time duration for the gas refresh interval, which brings about a relative increase in the process rate of the first partial reaction in comparison with the process rate of the second partial reaction. |
| priorityDate | 2021-06-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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