http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-8001363-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
filingDate 1979-12-27^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1980-07-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-8001363-A1
titleOfInvention Lpcvd systems having in situ plasma cleaning
abstract Process for cleaning wall deposits from a furnace tube (11) used in a low pressure chemical vapor film deposition system (10). The cleaning of the tube is carried out in situ in the furnace by creating a deposit etching plasma within the tube. The plasma is generated by introducing a suitable gas into the tube and applying RF energy to elements (32) located along selected portions of the tube for coupling the RF energy to the gas.
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priorityDate 1978-12-29^^<http://www.w3.org/2001/XMLSchema#date>
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