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filingDate 1987-09-02^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1988-04-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-8802554-A1
titleOfInvention High-frequency power transistor with bipolar epitaxial technology
abstract In a high-frequency power transistor with bipolar epitaxial technology, the emitter (2), the base (3) and the collector (4) contacts are located on a main plane of a silicon chip. On the second, opposite main plane, a metallization (22) can be applied to provide a trouble-free connection with a cooling body. Within the substrate, shield electrodes (13, 15) can be provided to compensate to a large extent the undesirable effect of depletion layer diodes.
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priorityDate 1986-09-27^^<http://www.w3.org/2001/XMLSchema#date>
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