| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbb477cab6287ad715ceb612f63441ba |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525 |
| filingDate |
1996-05-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_242b1a26d959ae70f6e414ebb07ac89c |
| publicationDate |
1996-12-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-9641374-A1 |
| titleOfInvention |
Double half via antifuse |
| abstract |
An antifuse (10) comprises a substantially planar conductive lower electrode (14) covered by a first layer of silicon nitride. A layer of amorphous silicon (16) is disposed over the silicon nitride layer. A first dielectric layer (18) is disposed over the surface of the amorphous silicon layer (16) and has a first aperture therethrough communicating with the amorphous silicon layer. A second layer of silicon nitride (22) is disposed over the first dielectric layer (18) and in the first aperture. A conductive upper electrode (20), such as a layer of titanium nitride, is disposed over the second layer (22) of silicon nitride. A second dielectric layer (22) is disposed over the surface of the conductive upper electrode (20) and has a second aperture therethrough in alignment with the first aperture communicating with the conductive upper electrode (20). An overlying metal layer (24) is disposed over the surface of the second dielectric layer (22) and in the second aperture making electrical contact with the conductive upper electrode (20). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5913138-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5986322-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0823733-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6150705-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0823733-A2 |
| priorityDate |
1995-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |