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filingDate 1998-08-21^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1999-02-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-9909586-A2
titleOfInvention Method for forming titanium silicide and titanium by cvd
abstract A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form titanium silicide.
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