http://rdf.ncbi.nlm.nih.gov/pubchem/reference/13484919

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Predicate Object
contentType Journal Article|Research Support, Non-U.S. Gov't
issn 2045-2322
issueIdentifier 1
pageRange 37748-
publicationName Scientific Reports
startingPage 37748
bibliographicCitation Huang QK, Yan Y, Zhang K, Li HH, Kang S, Tian YF. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices. Sci Rep. 2016 Nov 23;6():37748. PMID: 27876868; PMCID: PMC5120293.
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date 2016-11-23^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1038/srep37748
https://pubmed.ncbi.nlm.nih.gov/27876868
https://pubmed.ncbi.nlm.nih.gov/PMC5120293
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http://rdf.ncbi.nlm.nih.gov/pubchem/journal/39356
language English
source https://pubmed.ncbi.nlm.nih.gov/
https://scigraph.springernature.com/
https://www.crossref.org/
title Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

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