http://rdf.ncbi.nlm.nih.gov/pubchem/reference/13612940

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publicationName Nanotechnology
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bibliographicCitation Fang SL, Han CY, Liu WH, Li X, Wang XL, Huang XD, Wan J, Fan SQ, Zhang GH, Geng L. Multilevel resistive random access memory achieved by MoO3/Hf/MoO3 stack and its application in tunable high-pass filter. Nanotechnology. 2021 Jun 29;32(38):385203. doi: 10.1088/1361-6528/ac0ac4.
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date 2021-06-29^^<http://www.w3.org/2001/XMLSchema#date>
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language English
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title Multilevel resistive random access memory achieved by MoO3/Hf/MoO3 stack and its application in tunable high-pass filter
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