http://rdf.ncbi.nlm.nih.gov/pubchem/reference/16191234

Outgoing Links

Predicate Object
contentType Journal Article
issn 2079-4991
issueIdentifier 10
pageRange 286-
publicationName Nanomaterials (Basel, Switzerland)
startingPage 286
hasFundingAgency http://rdf.ncbi.nlm.nih.gov/pubchem/organization/MD5_487baf6554eb36bb22c6138d90a7c50f
bibliographicCitation Yang H, Qin S, Zheng X, Wang G, Tan Y, Peng G, Zhang X. An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials. Nanomaterials (Basel). 2017 Sep 22;7(10). PMID: 28937619; PMCID: PMC5666451.
creator http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_fa7b8bd0b7531fdeeacc53031d95c7e8
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_489d4d681035140b32f837d3a8caf342
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_181ebc234efa9b81b2fe61e0eb4fc910
http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0001-7507-1178
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_15f220911d870b637404d9db31a8931e
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_0fb4a8719a093fd6f163ced95e6f18b7
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_933c348d1c1eb055679402b34f2f589e
http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0002-5974-1175
date 2017-09-22^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.3390/nano7100286
https://pubmed.ncbi.nlm.nih.gov/PMC5666451
https://pubmed.ncbi.nlm.nih.gov/28937619
isPartOf https://portal.issn.org/resource/ISSN/2079-4991
http://rdf.ncbi.nlm.nih.gov/pubchem/journal/41513
language English
source https://pubmed.ncbi.nlm.nih.gov/
https://www.crossref.org/
title An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
discussesAsDerivedByTextMining http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5462310
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/MD5_81634db8d8ae7c823eb51457973e8039

Showing number of triples: 1 to 28 of 28.