http://rdf.ncbi.nlm.nih.gov/pubchem/reference/18219453

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contentType Journal Article
endingPage 28135
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issueIdentifier 41
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bibliographicCitation Song J, Kim SJ, Woo WJ, Kim Y, Oh I, Ryu GH, Lee Z, Lim JH, Park J, Kim H. Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor. ACS Appl. Mater. Interfaces. 2016 Oct 04;8(41):28130–5. doi: 10.1021/acsami.6b07271.
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date 2016-10-04^^<http://www.w3.org/2001/XMLSchema#date>
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https://doi.org/10.1021/acsami.6b07271
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title Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor
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