http://rdf.ncbi.nlm.nih.gov/pubchem/reference/202225595

Outgoing Links

Predicate Object
contentType Journal Article
issn 0272-9172
1946-4274
pageRange 423-
publicationName MRS Online Proceedings Library
startingPage 423
bibliographicCitation Abe K, Watahiki T, Yamada A, Konagai M. Analysis of Radical Reaction on Growing Surface During Si Epitaxy by Photo-Cvd. MRS Advances. 1998;507():423. doi: 10.1557/proc-507-423.
creator http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_ca3d3af02181da8f9521bff1bfcd1e8f
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_18f6f2f9f97bbb5cee8cdc74be53822c
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_78cc40597a9ed165bebd0eeaca8ea9b7
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_4a8fafef162d2922ff1a5770780c2948
date 1998
identifier https://doi.org/10.1557/proc-507-423
isPartOf http://rdf.ncbi.nlm.nih.gov/pubchem/journal/33231
https://portal.issn.org/resource/ISSN/1946-4274
https://portal.issn.org/resource/ISSN/0272-9172
language English
source https://scigraph.springernature.com/
https://www.crossref.org/
title Analysis of Radical Reaction on Growing Surface During Si Epitaxy by Photo-Cvd

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