reference/202246083

Predicate	Object
contentType	Journal Article
endingPage	430
issn	0361-5235 1543-186X
issueIdentifier	4
pageRange	426-430
publicationName	Journal of Electronic Materials
startingPage	426
bibliographicCitation	Limb JB, Lee W, Ryou JH, Yoo D, Dupuis RD. Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes. Journal of Electronic Materials. 2007 Mar 29;36(4):426–30. doi: 10.1007/s11664-006-0072-6.
creator	http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_0f6a06e3c9550211fe3c5e278fbd027b http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_4e6625fcbe45f4d1b292e7aab665b798 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_313ea1c5f68002ffebdf4903faa7486b http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_da24d0badcdb886344df32bfd9186a87 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_6bfac1f6ed30ce835fa1de9876827796
date	2007-03-29^^<http://www.w3.org/2001/XMLSchema#date>
identifier	https://doi.org/10.1007/s11664-006-0072-6
isPartOf	https://portal.issn.org/resource/ISSN/0361-5235 https://portal.issn.org/resource/ISSN/1543-186X http://rdf.ncbi.nlm.nih.gov/pubchem/journal/45479
language	English
source	https://scigraph.springernature.com/ https://www.crossref.org/
title	Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes

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