http://rdf.ncbi.nlm.nih.gov/pubchem/reference/203354830

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contentType Journal Article
endingPage 1440
issn 2190-5517
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issueIdentifier 5
pageRange 1433-1440
publicationName Applied Nanoscience
startingPage 1433
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bibliographicCitation Xue Y, Jiang Y, Li F, Zhong R, Wang Q. Fabrication and characteristics of back-gate black phosphorus effect field transistors based on PET flexible substrate. Applied Nanoscience. 2019 Dec 19;10(5):1433–40. doi: 10.1007/s13204-019-01226-8.
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date 2019-12-19^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1007/s13204-019-01226-8
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language English
source https://scigraph.springernature.com/
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title Fabrication and characteristics of back-gate black phosphorus effect field transistors based on PET flexible substrate

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