http://rdf.ncbi.nlm.nih.gov/pubchem/reference/205609517
Outgoing Links
Predicate | Object |
---|---|
contentType | Journal Article |
issn | 0272-9172 1946-4274 |
pageRange | 263- |
publicationName | MRS Online Proceedings Library |
startingPage | 263 |
bibliographicCitation | Miura Y, Fujieda S, Hasegawa E. Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films. MRS Advances. 1999;592():263. doi: 10.1557/proc-592-263. |
creator | http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_2519020a905469289647ba7ea89e824d http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_46dc52c3cb2cb8819ed04d40baae5bef http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_471c28ce654d5611e7870056e2bb78b0 |
date | 2000 |
identifier | https://doi.org/10.1557/proc-592-263 |
isPartOf | https://portal.issn.org/resource/ISSN/1946-4274 https://portal.issn.org/resource/ISSN/0272-9172 http://rdf.ncbi.nlm.nih.gov/pubchem/journal/33231 |
language | English |
source | https://scigraph.springernature.com/ https://www.crossref.org/ |
title | Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films |
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