| Predicate |
Object |
| contentType |
Journal Article |
| endingPage |
1840 |
| issn |
0361-5235
1543-186X |
| issueIdentifier |
3 |
| pageRange |
1835-1840 |
| publicationName |
Journal of Electronic Materials |
| startingPage |
1835 |
| bibliographicCitation |
Reza M, Steky FV, Suendo V. Effect of Acid Doping on Junction Characteristics of ITO/Polyaniline/N719/Ag Diode. Journal of Electronic Materials. 2020 Jan 02;49(3):1835–40. doi: 10.1007/s11664-019-07906-z. |
| creator |
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_545a8f4e37e61d1684d4323d70967b13
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_c96de62beb273f28b607f825aec803e9
http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0002-3402-433X |
| date |
2020-01-02^^<http://www.w3.org/2001/XMLSchema#date> |
| identifier |
https://doi.org/10.1007/s11664-019-07906-z |
| isPartOf |
http://rdf.ncbi.nlm.nih.gov/pubchem/journal/45479
https://portal.issn.org/resource/ISSN/0361-5235
https://portal.issn.org/resource/ISSN/1543-186X |
| language |
English |
| source |
https://www.crossref.org/
https://scigraph.springernature.com/ |
| title |
Effect of Acid Doping on Junction Characteristics of ITO/Polyaniline/N719/Ag Diode |