http://rdf.ncbi.nlm.nih.gov/pubchem/reference/21726930

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bibliographicCitation Tseng YT, Lu LS, Shen FC, Wang CH, Sung HY, Chang WH, Wu WW. In Situ Atomic-Scale Observation of Monolayer MoS2 Devices under High-Voltage Biasing via Transmission Electron Microscopy. Small. 2022 Feb;18(7):e2106411. doi: 10.1002/smll.202106411. PMID: 34995002.
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date 2022-01-07^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1002/smll.202270034
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title In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy (Small 7/2022)
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