http://rdf.ncbi.nlm.nih.gov/pubchem/reference/22831419

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contentType Journal Article|Research Support, Non-U.S. Gov't
endingPage 346
issn 1600-5775
0909-0495
issueIdentifier Pt 3
pageRange 340-346
publicationName Journal of Synchrotron Radiation
startingPage 340
bibliographicCitation Zhang J, Pintilie I, Fretwurst E, Klanner R, Perrey H, Schwandt J. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon. J Synchrotron Radiat. 2012 May;19(Pt 3):340–6. doi: 10.1107/s0909049512002348. PMID: 22514167.
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date 2012-03-15^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/22514167
https://doi.org/10.1107/s0909049512002348
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language English
source https://pubmed.ncbi.nlm.nih.gov/
https://www.crossref.org/
title Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivityn-type silicon
discussesAsDerivedByTextMining http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID190217
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