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Zhang J, Pintilie I, Fretwurst E, Klanner R, Perrey H, Schwandt J. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon. J Synchrotron Radiat. 2012 May;19(Pt 3):340–6. doi: 10.1107/s0909049512002348. PMID: 22514167. |