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Su M, Yang Z, Liao L, Zou X, Ho JC, Wang J, Wang J, Hu W, Xiao X, Jiang C, Liu C, Guo T. Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications. Advanced Science. 2016 Apr 15;3(9). doi: 10.1002/advs.201600078. |