http://rdf.ncbi.nlm.nih.gov/pubchem/reference/31150787

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contentType Journal Article
issn 1361-6528
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issueIdentifier 43
pageRange 435702-
publicationName Nanotechnology
startingPage 435702
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bibliographicCitation Kim HR, Kim GH, Seong NJ, Choi KJ, Kim SK, Yoon SM. Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions. Nanotechnology. 2020 Oct 23;31(43):435702. doi: 10.1088/1361-6528/aba46e. PMID: 32647094.
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date 2020-08-04^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/32647094
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language English
source https://pubmed.ncbi.nlm.nih.gov/
https://www.crossref.org/
title Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions

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