http://rdf.ncbi.nlm.nih.gov/pubchem/reference/31678846

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issn 0957-4484
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publicationName Nanotechnology
startingPage 295702
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bibliographicCitation Li L, Lee I, Lim D, Kang M, Kim GH, Aoki N, Ochiai Y, Watanabe K, Taniguchi T. Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate. Nanotechnology. 2015 Jul 24;26(29):295702. doi: 10.1088/0957-4484/26/29/295702. PMID: 26136152.
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identifier https://pubmed.ncbi.nlm.nih.gov/26136152
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title Raman shift and electrical properties of MoS2bilayer on boron nitride substrate
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