bibliographicCitation |
Li L, Lee I, Lim D, Kang M, Kim GH, Aoki N, Ochiai Y, Watanabe K, Taniguchi T. Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate. Nanotechnology. 2015 Jul 24;26(29):295702. doi: 10.1088/0957-4484/26/29/295702. PMID: 26136152. |