http://rdf.ncbi.nlm.nih.gov/pubchem/reference/32388609

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contentType Journal Article|Research Support, Non-U.S. Gov't
endingPage 2264
issn 1530-6984
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issueIdentifier 4
pageRange 2259-2264
publicationName Nano Letters
startingPage 2259
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bibliographicCitation Conesa-Boj S, Li A, Koelling S, Brauns M, Ridderbos J, Nguyen TT, Verheijen MA, Koenraad PM, Zwanenburg FA, Bakkers EPAM. Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires. Nano Lett. 2017 Feb 28;17(4):2259–64. doi: 10.1021/acs.nanolett.6b04891.
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date 2017-02-28^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/28231017
https://pubmed.ncbi.nlm.nih.gov/PMC5391496
https://doi.org/10.1021/acs.nanolett.6b04891
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http://rdf.ncbi.nlm.nih.gov/pubchem/journal/22479
language English
source https://www.crossref.org/
https://pubmed.ncbi.nlm.nih.gov/
title Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires

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