reference/32421792

http://rdf.ncbi.nlm.nih.gov/pubchem/reference/32421792

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Predicate	Object
contentType	Journal Article
issn	0935-9648 1521-4095
issueIdentifier	28
pageRange	e1800932-
publicationName	Advanced materials (Deerfield Beach, Fla.)
startingPage	e1800932
hasFundingAgency	http://rdf.ncbi.nlm.nih.gov/pubchem/organization/MD5_487baf6554eb36bb22c6138d90a7c50f http://rdf.ncbi.nlm.nih.gov/pubchem/organization/MD5_99960092a6453c4dfefe26096ae6e312
bibliographicCitation	Liu X, Liang R, Gao G, Pan C, Jiang C, Xu Q, Luo J, Zou X, Yang Z, Liao L, Wang ZL. MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit. Adv Mater. 2018 Jul;30(28):e1800932. doi: 10.1002/adma.201800932. PMID: 29782679.
creator	http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_f554072616fab92816d6e87cc2611a47 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_22fe07174a5186171d0b166dd2db1e8e http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_6bfe29b6e341308e1e897d0199bec4fc http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_516adaed0a1d7ab9783d96a80d20be53 http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0002-5530-0380 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_43be90b2904fd6391767907a367759d8 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_02de824a00b8e547b1c1eb1d65088f2a http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_1370510c55926b92017acf1097e554aa http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_ced9b23d3345cd6626a0cb0063f06528 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_055078fe08dd1b882ad0d3286cff17b9 http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0003-4553-6338 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_e6cc4f7cbac910dd76b2f011661e6bf0 http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0003-2572-1413
date	2018-05-21^^<http://www.w3.org/2001/XMLSchema#date>
identifier	https://doi.org/10.1002/adma.201800932 https://pubmed.ncbi.nlm.nih.gov/29782679
isPartOf	https://portal.issn.org/resource/ISSN/1521-4095 https://portal.issn.org/resource/ISSN/0935-9648 http://rdf.ncbi.nlm.nih.gov/pubchem/journal/30153
language	English
source	https://www.crossref.org/ https://pubmed.ncbi.nlm.nih.gov/
title	MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit
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