http://rdf.ncbi.nlm.nih.gov/pubchem/reference/35098009

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contentType Journal Article
endingPage 47594
issn 1944-8252
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issueIdentifier 42
pageRange 47587-47594
publicationName ACS Applied Materials & Interfaces
startingPage 47587
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bibliographicCitation Itzhak A, He X, Kama A, Kumar S, Ejgenberg M, Kahn A, Cahen D. NiN-Passivated NiO Hole-Transport Layer Improves Halide Perovskite-Based Solar Cell. ACS Appl Mater Interfaces. 2022 Oct 26;14(42):47587–94. PMID: 36226899; PMCID: PMC9614719.
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date 2022-10-13^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/36226899
https://doi.org/10.1021/acsami.2c11701
https://pubmed.ncbi.nlm.nih.gov/PMC9614719
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language English
source https://pubmed.ncbi.nlm.nih.gov/
https://www.crossref.org/
title NiN-Passivated NiO Hole-Transport Layer Improves Halide Perovskite-Based Solar Cell

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